| 摘要 |
PURPOSE:To form a pattern having an overhung shape readily, in a pattern forming method by exposure, by stopping development once in the middle of a developing step after the exposure, washing and removing developer, and continuing the development again. CONSTITUTION:Photoresist is applied on a semiconductor substrate 1 to a thickness of 1.5 mum. A suitable mask is placed on the photoresist, and exposure is performed. Thereafter, alkali aqueous solution including sodium hydroxide and tetramethylammonium hydroxide is used as developer. With the semiconductor substrate 1 in a stopped state, the substrate is made to react with the developer. After a specified time, during which the photoresist at the exposed part is not completely developed and removed, has elapsed, the substrate 1 is washed with pure water with the substrate being rotated. The developer is once removed from the substrate 1. Thereafter, the developer is continuously supplied again, and the development is continued. Thus the specified pattern is obtained. |
