| 摘要 |
PURPOSE:To prevent increase of contact resistance at the boundary by conducting, in addition to deposition of a metal to a base material, a first ion irradiation using an ion of hydrogen and inactive element and a second ion irradiation using at least a kind of ion among silicon, group IIIb and group Vb elements and then conducting again the first ion irradiation. CONSTITUTION:A base material 6 is loaded, for example, to a holder to be housed in a vacuum vessel. A vaporization source 12 and an ion source 20 are arranged toward the base material 6. With deposition of a metal to the base material 6, irradiation of a first ion consisting of at least a kind of ion of hydrogen and inactive element and irradiation of a second ion consisting of at least a kind of ion of silicon, group IIIb elements and group Vb elements are conducted and thereafter the first ion irradiation is conducted again. Irradiation of ion in addition to deposition of metal allows formation of a metal film having good crystal property on the surface of base material and also prevents increase of contact resistance at the boundary of metal film and base material due to irradiation of ion. Moreover, increase of specific resistance of metal film is little detected.
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