| 摘要 |
PURPOSE:To contrive to improve the uniformity of an etching rate in the surface of the substrate of a semiconductor device by arranging the same substances as substances to be etched on the periphery of the substrate of the device. CONSTITUTION:A parallel-plate reactive ion etching device for etching SiO2 has a structure, wherein a Teflon plate 3 and 8 pieces of coated rings 1 are arranged on the lower electrode of the etching device and 8 pieces of samples 2 are each put on the inner side of each coated ring. As the coated rings 1, two kinds of a Teflon-coated ring and an SiO2 coated ring are used and as the samples 2, a thermal oxide film formed on an Si substrate in a thickness of about 5000 Angstrom is used. By arranging the same substances as substances to be etched on the periphery of the substrate of the semiconductor device in such a way, etching having a good uniformity can be executed.
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