| 摘要 |
PURPOSE:To make the heights of semiconductor layers, which are different to each other, approximately equal, by forming a glass applied layer on two different semiconductor layers, oxidizing the semiconductor layers, and selectively removing the applied glass layer and oxide films. CONSTITUTION:An interlayer insulating film 2 made of silicon oxide is deposited and formed on a silicon single crystal substrate 1. Contact holes 3 corresponding to a specified pattern are provided in the insulating film 2. A glass applied layer 5 is formed on the insulating film 2. First and second epitaxial layers 4a and 4b, which are covered with the glass layer 5, are oxidized from the surface through corresponding thick film regions, and first and second oxide films 40a and 40b are grown. The oxide film 40b becomes thicker than the oxide film 40a. When etch back is performed, the glass layer 5 is removed, and the oxide films 40a and 40b are removed. As a result, the heights of both epitaxial layers 4a and 4b become approximately equal.
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