| 摘要 |
PURPOSE:To improve heat dissipation property, by providing a heat dissipation layer having high heat conductivity from the outside of a stripe shaped region of a semiconductor substrate by way of an insulating layer, which covers the side surface parts of a current blocking layer and the like. CONSTITUTION:An insulating layer 10 comprises an electric insulating body, e.g., a silicon oxide film. The thin insulating layer 10 is fromed so as to cover a part from the outside of a stripe shaped region, where a current blocking layer 2 of a semiconductor substrate 1 is formed, to the side surface parts of the current blocking layer 2 in the vicinity of a current constriction groove 3, a lower clad layer 4, an active layer 5, an upper clad layer 6 and a cap layer 7. A heat dissipation layer 11 comprising a material having high heat conductivity is formed on the insulating layer 10. The yielded hear is conducted to outer atmosphere and electrodes 8 and 9 through the insulating layer 10, which is formed in the vicinity, the heat dissipation layer 11 and the insulating layer 10.
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