Wet-chemical patterning of hafnium boride layers

摘要

In a process of wet-chemically patterning hafnium boride, the object is, in particular, that it should be possible to pattern hafnium boride selectively with respect to layers sensitive to hydrofluoric acid. The solution is to immerse the hafnium boride in sulphuric acid optionally containing additives which promote the process. The sulphuric acid etches the hafnium boride absolutely selectively with respect to silicon dioxide. The invention can be applied, for example, for producing resistance heating layers for bubble jet-printer heads. <IMAGE>