| 摘要 |
PURPOSE:To increase the effect of cleaning treatment and to facilitate the maintenance of a cleaning power to an increase in the number of sheets to be treated of semiconductor wafers by a method wherein the wafers are treated in ammonia vapor which contains a specified amount of ozone and has a temperature of 30-80 deg.C. CONSTITUTION:Semiconductor wafers are precleansed by ultrasonic cleaning and thereafter, the wafers are rinsed with pure water for 10 minutes after being put in a cleaning tank filled with ammonia vapor, which contains 0.1-20 vol.% of ozone and has a temperature of 30-80 deg.C, to be cleansed for about 5-20 minutes. Thereby, the attachment of contaminated fine particles is reduced, the wafers can be cleansed in large quantities without the lowering of a cleaning effect due to the deterioration of a cleaning fluid and a cleaning method for high-quality and high-yield semiconductor wafers can be obtained.
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