| 摘要 |
PURPOSE:To make it possible to perform mass production of blue light emitting elements having high light emitting efficiency and to make a cost low, by providing a P-N junction characterized by excellent hetero-junction by using ZnxMg1-xTe (0<x<=0.5) as a P layer and ZnSeyS1-y (0<=y<=1) as an N layer. CONSTITUTION:An N-type InGaAs buffer layer 10, an N-type ZnSe layer 9 and a P-type ZnMgTe layer 8 are sequentially formed on ab N-type GaAs substrate crystal 11. An ohmic group II-III alloy electrode 7 is provided on the layer 8. An ohmic Au-Ge electrode 12 is provided beneath the substrate 11. An Si3N4 protective film 13 is formed on the P-type ZnMgTe layer 8 so as to cover the electrode 7. As the P-type layer 8, ZnxMg1-xTe (0<x<=0.5), e.g., Zn0.3Mg0.7Te, is used. The lattice constant of said material is made to agree with that of ZnSeyS1-y (0<=y<=1), e.g., ZnSe. At this time, energy gaps of both materials approximately agree to each other, and the value is 2.6 eV or more. |
