发明名称 Highly integrated master-slice IC having a memory area, and method for producing it
摘要 A gate array chip having an array composed of strip-shaped active zones is constructed on a semiconductor substrate. Zones assigned to the wiring respectively have a capacity for two to four wires. The latter are arranged between the respectively adjacent pairs of active zones. One or more active zones are used as wiring zones in a logic switching region. The wiring is carried out in storage blocks by using only zones assigned to the wiring. A corresponding master-slice IC has a high degree of integration and a high operating speed.
申请公布号 DE3807816(A1) 申请公布日期 1988.09.29
申请号 DE19883807816 申请日期 1988.03.10
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 YONEZU, RYOU, ITAMI, HYOGO, JP
分类号 H01L21/82;G11C5/06;G11C11/41;H01L21/822;H01L23/528;H01L27/04;H01L27/10;H01L27/118;H03K19/173;(IPC1-7):H01L27/10;H01L21/72 主分类号 H01L21/82
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