| 摘要 |
A laser arrangement having coupled semiconductor lasers which can be driven separately consisting of a p-doped carrier substrate (1), a p-doped first layer (2) having n-doped edge strips (3), a first laser stripe (5), an n<+>-doped coupling strip (6), a second laser stripe (7), a p-doped covering strip (8) and a second n-doped layer (4) which is grown on the first layer (2) and encloses and covers this layer structure in the form of strips, and in which a p<+>-doped region (9) is constructed on the covering stripe (8) as far as the surface, the carrier substrate (1), the p<+>-doped region (9) and the n-doped part of the second layer (4) being provided with metal contacts (10, 11, 12). <IMAGE>
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