| 摘要 |
PURPOSE:To expand the selecting width of materials for heat dissipation bodies, by using lead-antimony-tin based soft alloy as a bonding layer for a semiconductor light emitting device, which is coupled with a heat dissipation body through the bonding layer. CONSTITUTION:On the upper surface of a heat dissipation body 1 formed with copper having good heat conductivity, a soft alloy 2 having the compositions of 85% lead, 11.5% antimony and 3.5% tin is deposited to a thickness of 2-3mum by an evaporating method or a plating method. An ohmic metal layer 5 is evaporated on the surface of a laser diode 3, which is closer to an active layer 4 as a heating part. A bonding metal layer 6 is evaporated on the opposite surface. The laser diode 3 is closely contacted with the heat dissipation body 1, with the active layer side at the lower side. Under this state, the heat dissipation body 1 is heated to 239 degrees in a nitrogen atmosphere. Then the soft alloy layer 2 is fused and attached to the ohmic metal layer 5. Thus thermal, electric bonding is performed. |
