| 摘要 |
PURPOSE:To effectively isolate a plurality of capacitors while a gap between the capacitors is narrowed to prevent stored charge from leaking and to highly integrate a MOS memory semiconductor device by forming a longitudinal groove in a semiconductor substrate, and burying a polycrystalline silicon in the groove to form a stored charge region. CONSTITUTION:A reverse conductivity type capacity electrode region 7 to a semiconductor substrate formed from the bottom of a groove 6 formed longitudi nally on the substrate 1 along the wall face, a polycrystalline silicon capacity storage electrode region 14 opposed through an insulating thin film 8 to the region 7 buried in the groove 6, and an isolation region 10 for preventing charge from leaking by electrically isolating the region 7 and a capacity storage elec trode region 14 are provided, and the region 7 is electrically connected to the adjacent groove capacity region 7. Thus, a plurality of capacitors can be effec tively isolated while a gap between the capacitors is narrowed, and highly integrated without introducing the leakage of the stored charge. |
