| 摘要 |
PURPOSE:To obtain an X-ray absorber pattern film having low internal stress by a Ti-W alloy film with excellent reproducibility by shaping the Ti-W alloy film through a sputtering film formation method using a reactive gas, in which nitrogen gas is added to argon gas, and mixing nitrogen into the Ti-W alloy film. CONSTITUTION:An X-ray absorber pattern film material employing a Ti-W alloy containing Ti is sputtered by a reactive gas, to which Ar gas and N2 gas are added, thus forming a film. The quantity of nitrogen gas mixed into argon gas is kept within a range of 30%-50% at that time. That is, when a Ti-W alloy film is shaped onto a mask substrate through a sputtering film formation method, N2 is mixed into the Ti-W alloy film by using the reactive gas in which N2 gas is added to Ar gas, thus forming an X-ray absorber pattern film by the Ti-W alloy film having an excellent absorption coefficient and low internal stress with superior reproducibility. |
