| 摘要 |
PURPOSE:To reduce a treatment time and facilitate improving heat-resistant properties and etching-resistant properties of resist by a method wherein a lamp which emits light containing intense ultraviolet rays is employed and a semiconductor wafer coated with the resist is heated by the light emitted from the lamp in an atmosphere under a reduced pressure. CONSTITUTION:When a light which contains rays with wavelengths shorter than 350 nm and is emitted by a lamp 1 is applied to resist 4 applied to a semiconductor wafer 5, while the wafer 5 is placed on a treatment table 6 in a depressurized atmosphere, the emitted light is applied to the wafer 5 and, at the same time, while the wafer 5 is heated by the light emitted from the lamp 1, the heating speed of the wafer 5 is controlled. With this constitution, as the resist 4 is heated by the light emitted from the lamp 1, a time required for treating the resist by ultraviolet radiation can be reduced and the temperature of the wafer 5 can be suppressed so as not to rise above the heat-resisting temperature of the resist 4.
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