Process for selective formation of II-VI group compound film.

摘要

A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) with larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (SNDL).