| 摘要 |
PURPOSE:To form a pattern with high accuracy by conducting alignment and exposure in a state in which a film mainly comprising nitrogen and titanium and having thickness of 42 nm or less is formed under a photoresist layer. CONSTITUTION:Alignment and exposure are performed under the state in which a film mainly comprising nitrogen and titanium and thickness of 42 nm or less is formed under a photoresist layer. That is, it is preferable that reflectivity at the time of alignment extends over 20% or more and it is desirable that reflectivity at the time of exposure inversely extends over 20% or less in reduction projection exposure. Since He-Ne laser beams having a wavelength of 633 nm are used as beams for alignment and the G beams of an ultrahigh pressure mercury lamp having a wavelength of 436 nm as beams for exposure, the thickness of a TiON film satisfying both conditions of reflectivity of 20% or more to beams having the wavelength of 633 nm and reflectivity of 20% or less to beams having the wavelength of 436 nm is brought to 42 nm or less.
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