发明名称 MASK FOR PHOTOELECTRON REPLICATION, AND USAGE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To apply photoelectrons positively to an alignment mark on a wafer, and to enable distinct replication having an excellent contrast, by constituting a mask for photoelectron replication of a transparent substrate and a metallic film, partially having an opening section and being formed onto said transparent substrate, and applying beams from the rear of the mask for photoelectron replication when the wafer and the mask are aligned. CONSTITUTION:A metallic film 11a having opening sections is shaped onto a transparent substrate 11a, a mask for photoelectron transfer consists of photoconductive films 11c, 11d formed onto the metallic film 11b, and the pattern of the opening sections is used as an alignment mark. That is, beams are applied from the rear of the mask 11 when the mask 11 and a wafer are aligned, and beams are applied onto the front of the mask 11 when the pattern is replicated. Accordingly, electrons are injected only from the photoconductive films in the opening sections in the metallic film as the alignment mark, thus accurately applying electrons to the alignment mark on the wafer.</p>
申请公布号 JPS63232427(A) 申请公布日期 1988.09.28
申请号 JP19870066066 申请日期 1987.03.20
申请人 FUJITSU LTD 发明人 SAKAMOTO JUICHI;KUDO JINKO;YAMADA AKIO;YASUDA HIROSHI
分类号 G03F1/00;G03F1/20;H01L21/027;H01L21/30 主分类号 G03F1/00
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