| 摘要 |
PURPOSE:To grow a multicomponent mixed-crystal intermetallic compound onto a semiconductor substrate in a liquid-phase epitaxial manner with excellent uniformity and reproducibility by sliding a separating plate and communicating both bathtubs by a through-hole in the separating plate. CONSTITUTION:With a first bathtub 1, the base has a hole, and it is brought into contact with a slidable separating plate 2 with a through-hole 3. With a second bathtub 4, it has two side surfaces parallel with the separating plate 2, a seed wafer 5 is placed onto an upper side surface, and an opposed side surface is brought into contact with a slider 6. A hole 4a having the same diameter as the through-hole 3 in the separating plate 2 is shaped to the upper side surface of the second bathtub adjacent to the position of installation of the seed wafer 5, the slider 6 is moved to the left and the right, and a semiconductor substrate 7 can be brought to the base of the second bathtub 4. Elements except a specific element are sufficiently brought to a mixed melting state uniformly in the first bathtub, the specific element is introduced to a solution in the second bathtub, and liquid-phase epitaxial growth is conducted onto the substrate, thus forming a multidimensional mixed crystal equally with excellent reproducibility.
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