| 摘要 |
PURPOSE:To improve the foundation selectivity significantly by reducing a microwave application rate and a bias voltage immediately after a treated object is etched. CONSTITUTION:While a treated object 10 is etched, a microwave application rate and a bias voltage are maintained at 300-500W and 50-250V respectively and, immediately after the etching of the treated object is finished, the microwave application rate and the bias voltage are reduced to 150-300W and 5-50V respectively. By reducing the microwave application rate and the bias voltage after the etching of the treated object 10 is finished as mentioned above, the rate of the microwave applied to a foundation 13 exposed after the etching of the treated object 10 is reduced. With this constitution, the ion quantity is reduced and the ion implantation energy into the treated object 10 is also reduced so that the foundation selectivity can be improved.
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