发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To attain precision and fining by forming an electron beam exposure resist film consisting of a liquid oxide film onto a resist film, developing the electron beam exposure resist film exposed and shaping an opening. CONSTITUTION:A resist film 2 is formed onto a substrate 1, an electron beam exposure resist film 3 composed of a liquid oxide film is shaped onto the resist film 2, the electron beam exposure resist film 3 is exposed with electron rays, and the electron beam exposure resist film 3 exposed is developed to form an opening 4. Oxygen plasma is applied through the opening 4 to shape an opening 5 in the resist film 2, a conductor film 6 is formed, and the resist film 2 is melted and electrode-wiring are shaped, leaving the conductor film 6. There is no possibility of the generation of short circuits, etc., in the electrode wiring 6 acquired, thus forming a fine and accurate shape.
申请公布号 JPS63232448(A) 申请公布日期 1988.09.28
申请号 JP19870066030 申请日期 1987.03.20
申请人 FUJITSU LTD 发明人 IIZUKA JUNICHI
分类号 H01L21/302;H01L21/027;H01L21/30;H01L21/306;H01L21/3065;H01L21/3205 主分类号 H01L21/302
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