| 摘要 |
PURPOSE:To prepare easily a uniform single crystal contg. scarcely crystal defect by dividing a crucible vessel and cooling a single crystal separated from the vessel when the single crystal grown by the Bridgman method attains wholly a solidified state. CONSTITUTION:A seed crystal 1 is charged to a receiver 3'' at the bottom of a crucible vessel 3 and a GaAs polycrystal as a starting material is mounted thereon. The vessel 3 is introduced into a chamber 7 and heated with a heating device 4 so as to maintain the temp. of a section housing the seed crystal 1 at a lower temp. and the temp. of a section housing the starting material at a higher temp. than the temp. of the seed crystal housing section. Thus, the GaAs polycrystal alone is melted to melt 2, and a procedure for growing a single crystal is executed by moving the vessel 3 or the heating device 4 relatively. When the growth of the single crystal 2 is completed in the vessel 3 and the whole of the single crystal 2 is solidified after beginning a cooling procedure, an upper dividable vessel 3' is divided to separate the solidified single crystal 2 from the inside wall of the upper dividable vessel, and the single crystal is taken out after cooling to RT. By this method, a single crystal 2 of a compound semiconductor having a uniform structure over the whole body of the single crystal contg. scarce crystal defect is prepd. easily.
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