METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING FORMING A MULTI-LEVEL INTERCONNECTION LAYER

摘要

This invention provides a method of manufacturing a semiconductor device wherein multi-layer interconnections of high reliability can be achieved by simple steps. …This invention is characterized in that it comprises the following steps: a step of forming a first interconnection layer on a semiconductor substrate; a step of selectively forming pillars on this first interconnection layer; a step of forming an insulating layer to partially isolate the first interconnection layer and a second interconnection layer; and a step of forming the second interconnection layer connected with the pillars; characterized in that the method further comprises; a step of forming a multi-layer structured layer (33, 34) consisting of a first layer (33) including Al and a second layer (34) including refractory metal on the semiconductor substrate (31); a step of forming a first interconnection layer (35) of required shape by patterning the first layer (33) and forming a layer pattern (36) on the interconnection layer by patterning the second layer (34); a step of forming pillars (38) by selectively leaving behind the layer pattern (36) in locations such as to contact a second interconnection layer; a step of forming an insulating layer (39) including SiO2; a step of exposing the tops of the pillars (38) from the insulating layer (39); and a step of forming the second interconnection layer (40) connected with the pillars.