| 摘要 |
PURPOSE:To form the vapor growth of a thin-film positively as an excellent film by each conducting the supply of a raw material gas to a reaction chamber, to which a base body to be formed by vapor growth is arranged, optical irradiation and the exhaust of the reaction chamber intermittently and performing the stoppage of optical irradiation and exhaust during the stoppage interval of the supply of the raw gas. CONSTITUTION:The supply of a raw gas to a reaction chamber, to which a base body to be formed by vapor growth is disposed, optical irradiation and the exhaust of the reaction chamber are each conducted intermittently, and the stoppage of optical irradiation and exhaust are performed during the stoppage interval of the supply of the raw gas. Accordingly, deposit species or active species formed by a photo- reaction on the base body to be formed by vapor growth or near it can reach to the base body to be formed by vapor growth, but the generation of deposits or extraneous matters to an optical introduction section is avoided because the species are removed before they diffuse and reach to the optical introduction, thus excellently shaping a thin-film through a photochemical reaction by efficient optical irradiation onto the base body to be formed by vapor growth.
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