发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To lower switching noise included in reference voltage by forming a capacitance between a wiring for supplying fixed voltage and a wiring for supplying reference voltage. CONSTITUTION:Internal circuits 31-3n are supplied with reference voltage Vr from a reference-voltage generating circuit 1 through a wiring 2 for supplying reference voltage, but the wiring 2 for supplying reference voltage is connected at fixed potential through a capacitor 4. The capacitor 4 is shaped to the virgin section of the upper section or lower section of a wiring for supplying fixed potential in the longitudinal section of a semiconductor integrated circuit. Accordingly, output impedance from the reference-voltage generating circuit 1 is lowered, and a high-frequency component such as switching noises contained in reference voltage Vr passes through the capacitor 4, thus reducing switching noise included in reference voltage Vr.
申请公布号 JPS63232454(A) 申请公布日期 1988.09.28
申请号 JP19870066037 申请日期 1987.03.20
申请人 FUJITSU LTD 发明人 TOYAMA KEI
分类号 H01L21/768;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L21/768
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