| 摘要 |
PURPOSE:To reduce power consumption at the time of interrupting a memory and to supply a large charge pump current at the time of operating it by providing a second charge pump circuit driven each time an address input signal to an MOS memory is varied. CONSTITUTION:In a substrate bias generator circuit for supplying a voltage to an MOS memory which needs a substrate bias, a first charge pump 11 is driven by the output of a self-excited oscillator 10, and a variation in an address input signal to be input to the memory is further detected by a buffer 13 to drive a second charge pump 14 by the output of the buffer 12 at each time. Thus, a current consumption can be reduced at the time of interrupting the memory, and a large charge pump current can be supplied at the time of operating the memory.
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