| 摘要 |
PURPOSE:To highly integrate a semiconductor integrated circuit and to realize acceleration thereof by forming wirings on a second porous silicon oxide layer having a thickness substantially the same as that of an element forming silicon layer on a first porous silicon oxide layer. CONSTITUTION:An element forming silicon layer 4 separated by a groove 7 buried with a low stress insulator on a first porous silicon oxide layer 8 on a semiconductor silicon substrate 1, and a second porous silicon oxide layer 8 having a thickness substantially the same as that of the layer 4 are provided, and wirings 16 are formed on the layer 8. Thus, since the layer 8 is formed on a region directly under the wirings, a parasitic capacity generated between the wirings 16 and the substrate 1 can be reduced, an integrated circuit is highly integrated and accelerated in this manner.
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