| 摘要 |
PURPOSE:To facilitate formation of a fine pattern when a step exists on a substrate by a method wherein a gas whose main component is a compound composed of chlorine, fluorine and carbon and to which an inert gas is added is employed for etching of a gold system metal electrode wiring. CONSTITUTION:For forming an electrode wiring composed of a metal layer containing gold 6 on a semiconductor substrate 1, a gas whose main component is a compound composed of chlorine, fluorine and carbon and to which an inert gas is added is employed as an etching gas and reactive ion etching is carried out while a gas pressure and a power density are properly selected. With this constitution, even if a step 8 exists on the substrate, a fine pattern with, for instance, a wiring width of 1mum and a writing interval of 1mum can be formed.
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