| 摘要 |
PURPOSE:To improve current/voltage characteristics by irradiating an opposed conductivity type amorphous silicon hydride film with hydrogen plasma. CONSTITUTION:When the junction of one conductivity type single crystal silicon film 2 and the opposing conductivity type amorphous silicon hydride film 3 is formed and the opposed conductivity type amorphous silicon hydride film 3 is irradiated with hydrogen plasma, hydrogen diffuses in the reverse conductivity type amorphous silicon hydride film 3, hydrogen atoms are taken in to dangling bonds on the interface of amorphous silicon and crystalline silicon, and the dangling bonds disappear. Accordingly, generation-recombination currents are reduced, thus acquiring a hetero-diode having excellent current/ voltage characteristics.
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