发明名称 |
Solar cell with low infra-red absorption and method of manufacture |
摘要 |
A cell for using solar radiation to generate electrical power comprises a direct band gap (or high absorption coefficient) substrate which is formed with at least one hole that extends from one side of the substrate to the other side of the substrate. A p-n junction formed with an emitter and a base is joined to one side of the substrate with the hole allowing means to make electrical contact with the base. A metallic layer is extended through the hole into electrical contact with the base to establish a low resistance path between the base of the p-n junction and the back side of the substrate.
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申请公布号 |
US4773945(A) |
申请公布日期 |
1988.09.27 |
申请号 |
US19870097497 |
申请日期 |
1987.09.14 |
申请人 |
GA TECHNOLOGIES, INC. |
发明人 |
WOOLF, LAWRENCE D.;BASS, JOHN C. |
分类号 |
H01L31/0224;H01L31/052;H01L31/068;(IPC1-7):H01L31/06;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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