| 摘要 |
A method of fusing two or more semiconductor wafers involves growing a silicon dioxide planar layer on each of two polished silicon wafer substrates, implanting positive ions in the silicon dioxide layers on one wafer and negative ions in the silicon dioxide layer on the other wafer. The source of positive ions is preferably cesium and the source of negative ions is preferably boron. The implanted grown oxide layers are brought into abutment so electrostatic attraction forces of the oppositely charged ions keep the wafers together while they are exposed to a relatively high temperature in an oxygen ambient to fuse the abutting surfaces together.
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