| 摘要 |
An imager includes a substrate of single crystalline silicon of one conductivity type having opposed major surfaces. A Schottky-barrier detector junction is along one of the major surfaces for converting detected radiation to charge carriers. An array of collecting electrodes is in the other major surface of the substrate and are of the same conductivity as the substrate but of higher conductivity. The collecting electrodes are adapted to collect the charge carriers created at the Schottky-barrier junction when the substrate is depleted. Surrounding the collecting electrodes is a well of the opposite conductivity type which isolates the collecting electrodes from each other. Within the well and along the other major surface of the substrate is transfer means, such as a charge-coupled device or MOS transistor circuit, for transferring the charge carriers from the collecting electrodes to an output. The well also serves as a barrier for preventing the charge carriers which are flowing from the Schottky-barrier junction to the collecting electrodes from entering the transfer means.
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