发明名称 |
GROWTH OF SINGLE CRYSTAL OF CONDUCTIVE OXIDE |
摘要 |
PURPOSE:To obtain the titled single crystal having a prescribed composition, by slowly cooling a KF or CuO solution containing a specific substance as a solute. CONSTITUTION:KF or CuO is added to a substance of formula (M is Ca, Sr or Ba; x is 0-1; y is 0-0.05) and the mixture is heated at a high temperature and completely melted until fine crystals are sufficiently disappeared. The molten mixture is slowly cooled to deposit a conductive oxide single crystal composed of the above substance.
|
申请公布号 |
JPS63230594(A) |
申请公布日期 |
1988.09.27 |
申请号 |
JP19870065288 |
申请日期 |
1987.03.19 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
HIDAKA YOSHIKAZU;MURAKAMI TOSHIAKI;ENOMOTO YOICHI;SUZUKI MINORU;ODA KEN;MORIWAKI KAZUYUKI |
分类号 |
C30B11/02;C30B29/22 |
主分类号 |
C30B11/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|