发明名称 GROWTH OF SINGLE CRYSTAL OF CONDUCTIVE OXIDE
摘要 PURPOSE:To obtain the titled single crystal having a prescribed composition, by slowly cooling a KF or CuO solution containing a specific substance as a solute. CONSTITUTION:KF or CuO is added to a substance of formula (M is Ca, Sr or Ba; x is 0-1; y is 0-0.05) and the mixture is heated at a high temperature and completely melted until fine crystals are sufficiently disappeared. The molten mixture is slowly cooled to deposit a conductive oxide single crystal composed of the above substance.
申请公布号 JPS63230594(A) 申请公布日期 1988.09.27
申请号 JP19870065288 申请日期 1987.03.19
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 HIDAKA YOSHIKAZU;MURAKAMI TOSHIAKI;ENOMOTO YOICHI;SUZUKI MINORU;ODA KEN;MORIWAKI KAZUYUKI
分类号 C30B11/02;C30B29/22 主分类号 C30B11/02
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