发明名称 |
Power hemt structure |
摘要 |
A modulation-doped field effect transistor comprises a gate recess through a top insulating layer, having a cross-section in a semiconductor layer increasing down to an interface with a further semiconductor layer and thereafter having a cross-section in the further semiconductor layer decreasing down to the bottom of the recess in the further semiconductor layer. A gate electrode is formed in the recess.
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申请公布号 |
US4774555(A) |
申请公布日期 |
1988.09.27 |
申请号 |
US19870083751 |
申请日期 |
1987.08.07 |
申请人 |
SIEMENS CORPORATE RESEARCH AND SUPPORT, INC. |
发明人 |
KOHN, ERHARD;SCHNEIDER, MARK E.;WU, CHIA-JEN |
分类号 |
H01L29/812;H01L21/285;H01L21/306;H01L21/335;H01L21/338;H01L29/423;H01L29/778;(IPC1-7):H01L29/80;H01L29/56 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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