| 摘要 |
PURPOSE:To prevent a poly Si layer from growing in a part, wherein a single crystal Si layer is selectively and epitaxially grown, by adding oxygen to the poly Si layer for forming a conductive layer. CONSTITUTION:A first oxide film 1b which is an insulating layer, a poly Si layer 2 which is a conductive layer and a second oxide film 1a which is an insulating layer are laminated on an Si substrate 4 and a hole is opened by etching. An oxygen-added poly Si layer 3 is adhered on the side surface, which is exposed by the etching, of the Si layer 2. When a single crystal Si layer 5 is selectively and epitaxially grown in this opening, the Si layer 2 is prevented its growth by the Si layer 3 and does not protrude in the Si layer 5 and a bipolar transistor having no leakage current can be formed in the Si layer 5 using the Si layer 2 as its base.
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