| 摘要 |
PURPOSE:To contrive the speedup of operation of a semiconductor device, an increase in the density of the device and the improvement of reliability of the device by a method wherein an impurity layer having a conductivity type inverse to that of a semiconductor substrate is formed in the substrate surface to bore a groove and impurity diffused layers having a conductivity type inverse to that of the substrate are provided separately from a gate electrode for filling the groove. CONSTITUTION:An n-type epitaxial layer 103, which is an impurity layer having a conductivity type inverse to that of a p-type semiconductor substrate 101, is formed in the surface of the substrate 101, a groove 113 to reach the substrate 101 is bored and is used as a channel region and at the same time, the layer 103 is halved by the groove 113 to form drain and source regions. A gate electrode 108 is buried in the groove 113 through a high-concentration p<+> impurity region 105 on the bottom part of this groove 113 and a gate insulating film 106 to reach the surface of the layer 103. Moreover, high-concentration n<+> diffused layers 109 and 110 having a conductivity type inverse to that of the substrate 101 are formed in the layer 103 separately from the edge end parts of the electrode 108. By this constitution, the injection of electrons into the film 106 is inhibited, the electric capacities of the layers 109 and 110 are decreased and the operation of a semiconductor device can be speeded up. Moreover, the channel length is decided by tie width and depth of the groove, an increase in the density of the device can be contrived and the reliability of the device can be improved.
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