| 摘要 |
PURPOSE:To enable a power semiconductor element to be protected against overcurrent and, further, to be protected effectively against thermal breakdown, by forming a simple over-current protection section and a temperature protection section on a semiconductor substrate on which the semiconductor element is provided. CONSTITUTION:On a semiconductor substrate provided for example with a power semiconductor element 11 that generates heat during operation, there is further provided an overcurrent protection section 14 for limiting electric current conducted through the semiconductor element 11, and a temperature protection section 15 for detecting increased temperature of the semiconductor element 11 and controllably interrupting operation of the semiconductor element 11. Accordingly, in case that overcurrent is going to flow through the semiconductor element 11, it is limited to a predetermined relatively small current value and the semiconductor element 11 is operated with large power with the small current value. Under such conditions, the temperature of the semiconductor element 11 can be increased in a relatively short period of time. Such increased temperature is detected by the temperature detection section 151 and current is controllably interrupted. In this manner, the semiconductor element can be protected efficiently.
|
