| 摘要 |
PURPOSE:To flatten the surface of a film without blistering of a silica film and disappearing of Al, by a method wherein the film is thickly grown and its protrusion part only is etched to flatten the film surface. CONSTITUTION:A first Al layer 2 is attached on a base 1 and the interlayer film 3 is thickly grown as shown in a diagram (a). Here, the protrusion part of the film 3 is etched. This etching is performed applying a photo resist to the part other than the protrusion part. The film 3 is flattened by this etching. Thereby, a semiconductor device, wherein the surface of each interlayer film 3 having the Al layer is also flattened, can be obtained without using a silica film.
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