| 摘要 |
PURPOSE:To grow stable plasma and to make it possible to prolong life and to deposit films at high speed by a method wherein an electrode, on which DC or low frequency AC voltage will be applied, and a microwave-introducing window are provided, and plasma is grown by applying DC or low frequency AC voltage and microwaves simultaneously. CONSTITUTION:The upper space located inside a container 5 is a plasma region A, and the lower space is a reaction region B. On this plasma region A, a pair of electrodes 1 and 1 are opposingly arranged, and DC or low frequency AC voltage is applied thereto. Also, a quartz introducing window 8, to be used to introduce microwaves, is arranged on the ceiling part 5 of the container 5, and microwaves MW are introduced from a waveguide 9. Plasma is generated by applying DC or low frequency AC voltage to be applied to the electrode 1 and the microwaves MW, to be introduced to the introduction window 8, are added simultaneously. As a result, stabilized plasma discharge is obtained, and the increase in deposition speed of films can be achieved. |
