| 摘要 |
PURPOSE:To reduce a resistor forming process, to easily form polysilicon resistors and to make it possible to easily form various polysilicon resistors, each having different sheet resistance in the same layer, by providing the polysilicon resistors in contacts of a semiconductor integrated circuit or in interlayer through-holes of a multilayer interconnection. CONSTITUTION:First wiring layers 5, each consisting of a two-layer structure of an Al layer 3 and a tungsten silicide layer 4, are formed on an Si oxide film 2 on an n-type Si substrate 1, a plasma nitride film 6 is formed thereon and through holes 7 are formed in the film 6. Among them are some through holes 7 packed with Al 3 or tungsten 4 and p-type polysilicon 8 is packed in the residual through holes 7 to form polysilicon resistors. Thereby, a resistor forming process is reduced and the polysilicon resistors can be easily obtained.
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