| 摘要 |
PURPOSE:To enable the stress in both films to be cancelled for restraining properties of the title device from fluctuating by a method wherein the insulating films covering a FET are laminated with multiple types of films with inner stress subjected to opposing stresses, i.e., tension and compression. CONSTITUTION:Respective elements including an FET, a diode and a resistor are integrated on a semi-insulating substrate 1 while insulating films 7-9 are composed of at least two types of laminated film layers subjected to opposing inner stresses, i.e., compression and tension to the semi-insulating substrate 1 in a compound semiconductor device formed of the insulating films 7-9 on respective elements. Thus, both stresses are cancelled by the laminated layers of the first and the second insulating films 7, 8. Through these procedures, the threshold voltage of FET can be restrained from fluctuating.
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