| 摘要 |
PURPOSE:To thin off the pad oxide film on the surface of a substrate and to prevent the oxidization of an oxide film from its side face by a side-wall film by a method wherein an oxynitride film is provided under a silicon nitride film. CONSTITUTION:An oxynitride film 3 is adhered to one main surface of a semi conductor substrate 1 through the intermediary of a thin pad oxide film 2, said film 3 is coated by a silicon nitride film 4, and then the films 3 and 4 on the field region 7 of the substrate 1 are removed. Then, an oxynitride film 5 is adhered to the whole surface of the substrate 1, and a side wall film 6 is formed on the side face of the films 3 and 4. Besides, a P+ or --type channel- stopper region 8 is formed on the region 7, and then a selective oxidization is performed, and a field oxide film 9, a part of which is buried in the substrate 1, is formed on the region 7 by performing a thermal oxidizing method. As a result, the encroaching of the region 7 into the film 4 can be reduced.
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