| 发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A DMOSFET |
| 摘要 |
A semiconductor device is disclosed in which the anode and cathode of a diode (D3) are connected respectively to the source (S) and drain (D) of the MOSFET (QM1). The diode (D3) has a set forward voltage drop lower than that of a parasitic diode (D1) formed by the junction between a channel base region (14a, 14b) and a drain region (12) constituting the MOSFET (QM1). |
| 申请公布号 |
DE3473535(D1) |
申请公布日期 |
1988.09.22 |
| 申请号 |
DE19843473535 |
申请日期 |
1984.06.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OHATA, YU C/O PATENT DIV. K.K. TOSHIBA;TANABE, HIROHITO C/O PATENT DIV. K.K. TOSHIBA;SUZUKI, KAZUAKI C/O PATENT DIV. K.K. TOSHIBA;MIWA, YUKIHARU C/O PATENT DIV. K.K. TOSHIBA;NAKAYAMA, YOSHIHITO C/O PATENT DIV. K.K. TOSHIBA |
| 分类号 |
H01L27/04;H01L27/07;H01L29/06;H01L29/45;H01L29/78;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/04 |
| 代理机构 |
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