发明名称 METAL ORGANIC CVD EQUIPMENT
摘要 PURPOSE:To obtain an excellent junction surface wherein a transition layer is not formed at the time of forming a hetero junction, by providing a quartz tube constituting a CVD equipment with a non-reactive gas spouting nozzle oriented in a desired direction. CONSTITUTION:The quartz tube 1 of a metal organic CVD equipment is provided with a non-reactive gas spouting nozzle 2 to spray a non-reactive gas against a substrate region 6, which is rapidly covered with the non-reactive gas simultaneously with the reaction gas switching. Thereby the reaction is conpulsority interrupted to progress, and the formation of a transition layer on the growth layer of a substrate 4 is obstructed at the time of the gap switching. Accordingly, an excellent junction surface with no transition layer can be obtained at the time of forming a hetero junction.
申请公布号 JPS63228717(A) 申请公布日期 1988.09.22
申请号 JP19870063013 申请日期 1987.03.18
申请人 FUJITSU LTD 发明人 TAKAGI SATORU
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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