| 摘要 |
PURPOSE:To prevent the breakdown of a MOSFET due to the operation of a parasitic thyristor by forming an alloy spike penetrating through a source region from the surface. CONSTITUTION:Alloy spikes 6 penetrating through source regions 4 from the surface of a semiconductor substrate 2, reaching up to P-type diffusion regions 3 and consisting of aluminum, etc., are shaped through ion implantation, heat treatment, etc. Accordingly, base resistance and emitter resistance formed into the regions 3 and 4 in an N-P-N transistor constituting a parasitic thyristor can be reduced, thus preventing breakdown due to the operation of the parasitic thyristor. |
