| 摘要 |
PURPOSE:To enable correspondence to a wide range of voltage from low voltage to high voltage by means of a single ion source, by detecting the accelerating voltage of an ion source for ion beam implantation and by automatically control the distance between the accelerating electrode and decelerating electrode of the ion source according to the detected signals. CONSTITUTION:This ion beam mixing equipment is equipped with a device for forming a thin film on a specimen 2 by means of vacuum vapor deposition or sputtering and an ion-source 4 device for ion beam implantation. The distance (d) between the accelerating and decelerating electrodes 11, 12 of the ion source 4 is automatically controlled according to the detected values of the signals of accelerating voltage. Further, this control is carried out in a mechanism part having compressed air and an expansion spring.
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