| 摘要 |
PURPOSE:To facilitate manufacture, and to improve yield by forming active layers in an enhancement type FET and a depletion type FET through one-time implantation and changing the kind of an insulator deposited before formation by an ohmic electrode and a gate electrode. CONSTITUTION:Active layers 13 in an enhancement type FET (E-FET) and a depletion type FET (D-FET) are shaped simultaneously to the surface of a GaAs semiconductor substrate 11 through selective ion implantation by a resist 12. Ohmic layers 4 are formed selectively through ion implantation by the resist 12. A CVD-SiN film 15 is deposited onto the surface of the substrate after heat treatment, and a CVD-SiO2 film 16 is deposited in a region as the D-FET. An ohmic electrode 17 and a gate electrode 18 are formed. Accordingly, the E-FET and the D-FET can be shaped easily, thus improving uniformity in a wafer surface, then enhancing yield. |
