| 摘要 |
<p>PURPOSE:To attain high-speed readout by providing a MOSFET operating at a saturation region and supplying a prescribed current and a current source circuit flowing a prescribed current corresponding to the MOSFET to a gate of an input-side MOSFET. CONSTITUTION:A MOSFETQ22 of diode form supplying a readout current to a selected memory cell, a MOSFETQ24 of current mirror form forming a readout amplifier current, a MOSFETQ26 operating at the saturation region and supplying a prescribed current to the gate of the MOSFETQ22, and a current source circuit flowing a prescribed current corresponding to the MOSFETQ26 are provided. Thus, the current of the MOSFET operating at the saturated region quickens the rising of the gate voltage of the input-side MOSFET formed as a diode form in the off-state of the selected memory cell.</p> |
