| 摘要 |
PURPOSE:To simplify the structure and make the production easy by epitaxially growing a semiconductor active layer while selectively applying laser light to the semiconductor substrate surface, thereby forming a semiconductor layer of a different forbidden band width. CONSTITUTION:A semiconductor substrate 1 is heated while it is supplied with AsH3; after the growth temperature is reached, AsH3, TMG, TMA and H2Se are supplied to grow, for instance, an N-type AlxGa1-xAs clad layer 2, and an epitaxial growth is made while excimer laser light is selectively applied to the substrate 1 surface, thereby forming a semiconductor layer 7 of a different forbidden band width in the semiconductor active layer. Then, TMG, TMA, AsH3 and DMZ gasses are supplied to grow a P-type AlGaAs clad layer 4, aud finally, a P-type GaAs contact layer 5 is grown, completing the production of a semiconductor wafer.
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