| 摘要 |
Epitaxial installation with at least one reaction chamber (10) of a dielectrical material, provided with a gas inlet in the cover area and a gas outlet in the floor area, a gas mixer (100) connected to the gas inlet of the reaction chamber (10), for the introduction of reaction and circulation gases, a rotatable graphite support (50), disposed in the reaction chamber between the gas inlet and gas outlet, tapering towards the gas inlet and in the form of a polyhedron, for supporting several wafers (70), an induction heater (510, 512), essentially surrounding the reaction chamber (10), for the indirect heating of the wafer support (50), a device for transporting the wafer support (50) from a charging zone (150) outside the reaction chamber (10) into a work position within the reaction chamber, a device (300) for dispatching the wafer support (50) with wafers (70) into the charging zone (15), and a pure air space (1) for the reception of said components of the installation. Also a pipe for carrying circulation and reaction gases from the gas mixer (100) through the reaction chamber (10) when the wafer supports (50) are in the work position, and for carrying pure air gases and inert gases to the pure air space (1) between the charging zone (150) and the work position within the reaction chamber (10), when the wafer supports are in the charging zone, ensuring that particles carried with the gases and created during the epitaxial process are kept away from the surface of the wafer support (50). |
