| 摘要 |
PURPOSE:To make a three-dimensional device formable in a target, by simulating dopan concentration distribution in an ion implating direction on the basis of the setting value of ion energy and ion quantity. CONSTITUTION:In case of a device which implants an ion in a target (b) after irradiating an ion B out of an ion source (a) to this target (b) via an ion energy control device (c) and an ion quantity control device (d), each setting value of an ion energy setting device (h) and an ion quantity setting device (g) is properly altered till dopant concentration distribution out of a simulate device (k) accords with the dopant concentration content stored in a memory device (f). And, the setting value in the state that both sides of the dopant concentration distribution are accorded with each other is given to the ion energy control device (c) and the ion quantity control device (d) in order. With this constitution, the dopant is implanted in the target (b) under the dopant concentration distribution approximate to the dopant concentration distribution inputted in an input device (e), whereby the dopant concentration distribution is controllable, thus a three-dimensional device is formable in the target.
|
